 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDS6681Z June 2005 FDS6681Z 30 Volt P-Channel PowerTrench(R) MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. (R) Features * -20 A, -30 V. RDS(ON) = 4.6 m @ VGS = -10 V RDS(ON) = 6.5 m @ VGS = -4.5 V * Extended VGSS range (-25V) for battery applications * HBM ESD protection level of 8kV typical (note 3) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Termination is Lead-free and RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings -30 25 -20 -105 2.5 1.2 1.0 -55 to +150 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS6681Z Device FDS6681Z Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation FDS6681Z Rev B (W) FDS6681Z Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) TA = 25C unless otherwise noted Parameter Test Conditions VGS = 0 V, ID = -250 A Min -30 Typ Max Units V ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 25 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -20 A VGS = -4.5 V, ID = -17 A VGS = -10 V, ID = -20 A,TJ=125C VDS = -5 V, ID = -20 A -26 -1 10 mV/C A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance -1 -1.8 6 3.8 5.2 5.0 79 -3 V mV/C 4.6 6.5 6.3 m gFS S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, V GS = 0 V, f = 1.0 MHz 7540 1400 1120 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 20 9 660 380 35 18 1060 610 260 150 ns ns ns ns nC nC nC nC Total Gate Charge at VGS = -10V Total Gate Charge at VGS = -5V Gate-Source Charge Gate-Drain Charge VDS = -15 V, ID = -20 A 185 105 26 47 FDS6681Z Rev B (W) FDS6681Z Electrical Characteristics Symbol IS VSD tRR QRR TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -2.1 A V ns nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage IF = -20 A, Reverse Recovery Time Reverse Recovery Charge dIF/dt = 100 A/s (Note 2) -0.7 125 -1.2 (Note 2) 94 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 2 1in pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6681Z Rev B (W) FDS6681Z Typical Characteristics 105 VGS = -10V 90 -ID, DRAIN CURRENT (A) -6.0V 75 -3.5V 60 45 30 -3.0V 15 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 -4.5V -4.0V 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -3.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 45 60 75 -ID, DRAIN CURRENT (A) 90 105 -4.0V -4.5V -5.0V -6.0V -8.0V -10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -20A VGS = -10V ID = -10A 0.01 1.4 1.2 0.008 TA = 125oC 0.006 1 0.8 0.004 TA = 25 C 0.002 o 0.6 -50 -30 -10 10 30 50 70 90 110 o TJ, JUNCTION TEMPERATURE ( C) 130 150 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 105 VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 100 90 -ID, DRAIN CURRENT (A) 75 60 45 30 15 0 1 1.25 1.5 1.75 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.25 10 TA = 125oC o 1 TA = 125oC -55oC 0.1 25 C -55oC 0.01 25 C o 0.001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6681Z Rev B (W) FDS6681Z Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -20A 10000 f = 1MHz VGS = 0 V 8 CAPACITANCE (pF) 8000 Ciss 6 VDS = -10V -20V 6000 4 -15V 4000 Coss 2 2000 Crss 0 0 40 80 120 Qg, GATE CHARGE (nC) 160 200 0 0 5 10 15 20 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25 C o 40 SINGLE PULSE RJA = 125C/W TA = 25C 10 30 1 20 0.1 10 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W 0.1 0.1 0.05 0.02 P(pk 0.01 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6681Z Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
Price & Availability of FDS6681Z
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |